| PART |
Description |
Maker |
| SI9801DY |
N/P-Channel 20-V (D-S) Pair
N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge
N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| SI7390DP SI7390DP-T1-E3 |
9 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching WFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
| SIDC14D60F6 SIDC14D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| STGW30NC60WD |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH?/a> IGBT
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SIDC03D120F6 |
Fast switching diode chip in EMCON-Technology soft, fast switching
|
Infineon Technologies AG
|
| SI7112DN |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7108DN-T1-E3 |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7452DP |
N-Channel 60-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
VISAY
|
| SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
